Oxford FlexAL: ALD

The Oxford FlexAL systems provide a new range of flexibility and capability in the engineering of nanoscale structures and devices by offering remote plasma atomic layer deposition (ALD) processes and thermal ALD within a single system. This system deliver maximum flexibility in the choice of materials and precursors, low-temperature processes enabled by plasma ALD, and repeatable processes via recipe-driven software interface.

 

Currently installed precursors: for HfO2 and Al2O3 deposition.

 

  • Tetrakislethylmethylaminolhafnium(IV)
  • Trimethylaluminium 

  

 

  • Remote plasma & thermal ALD in one flexible tool
  • Automated 200mm load lock for process flexibility
  • Low-temperature processes enabled by plasma ALD
  • Low damage maintained by the use of remote plasma
  • Ability to handle from small wafer pieces up to full 200mm wafers
  • Integral glove box on precursor modules for in-situ change-over
  • Max deposition temperature 400ºC
  • ICP source 300W at 13.56 MHz
  • Electrode diameter 240 mm

 

  

User Support and  Scientific Advice

 

Responsible: Juan Luis Aguilera  juan.aguilera@remove-this.ist.ac.at

Substitute:  Philipp Taus  philipp.taus@remove-this.ist.ac.at  

 

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