•   Deep silicon etching
  •   Bosch process capability : C4F8 and  SF6
  •   ICP source 1200 W at 13.56 MHz driven parallel plate reactor
  •   Wide temperature range substrate electrode: -150 to + 400 °C
  •   Gasses: C4F8, CHF3,  CF4, SF6, O2, Ar
  •   Vacuum load lock
  •   Shower head gas inlet optimized for RIE
  •   High conductance vacuum layout
  •   PC 2000 Control

Allowed Materials: PMMA, Photoresist, Ge, Si

 

 

 

 

User Support and  Scientific Advice

 

Responsible: Juan Luis Aguilera  juan.aguilera@remove-this.ist.ac.at

Substitute: Philipp Taus  philipp.taus@remove-this.ist.ac.at  


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