ORBIS: MemsStar System for HF Vapor

HF vapor etch system is used to remove sacrificial silicon oxide layers, primarily to release silicon microstructures. Gaseous HF etchant penetrates smaller features easily and allows longer undercuts. The system allows the possibility of stiction-free etching and handles materials from sample sizes to 200mm.

 Allowed materials: SiO2 and Si3N4 ( No resist)





  • Fully integrated and compact system
  • HF vapor etch to remove sacrificial silicon oxide layers
  • High selectivity and stable process windows
  • Large process window to optimize process for any structure
  • Selectivity with silicon nitride and silicon dioxide (<5% 1σ)
  • High selectivity to under layer and mechanical materials
  • High etch rates for undercut and blanket Si
  • Uniformity (<5% 1σ)
  • Repeatability (<5% 1σ)
  • No corrosion
  • No stiction
  • In-line controls: etch rate monitor, endpoint, and temperature


User Support and  Scientific Advice


Responsible: Philipp Taus  philipp.taus@remove-this.ist.ac.at  

Substitute: Lubuna Shafeek  lubuna.shafeek@remove-this.ist.ac.at 



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