23. Aug 2019
Split-gate-induced 2×2 array of single-electron dots in silicon-oninsulator
Datum: 23. August 2019 |
11:00 –
12:00
Sprecher:
Fabio Ansaloni, Niels Bohr Institute
Veranstaltungsort: Foyer seminar room Ground floor / Office Bldg West (I21.EG.128)
[1] R. Maurand et al, Nature Comm., 7, 13575 (2016)
[2] A. Crippa et al, Nature Comm., 10, 2776 (2019)
[3] S. Barraud et al, Technologies, 4, 10 (2016)