Mar 26, 2020
Free-standing nanostructures at atomic scale: from growth mechanisms to local properties
Date: March 26, 2020 |
4:00 pm –
5:00 pm
Speaker:
Jordi Arbiol, Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Location: Mondi Seminar Room 2, Central Building
Here, we present a detailed study on the polarity-driven growth mechanism at the nanoscale, highlighting suitable future possibilities of polarity engineering of semiconductor nanostructures from VLS vertical complex heterostructures to the newest selected area growth hybrid quantum networks. The present study has been extended over a wide range of semiconductor compounds, covering the most commonly synthesized III-V (GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb) and II-VI (ZnO, ZnTe, CdS, CdSe, CdTe) nanowires and other free-standing nanostructures (tripods, tetrapods, belts and membranes). This systematic study allowed us to explore the parameters that may induce polarity-dependent and polarity-driven growth mechanisms, as well as the polarity related consequences on the physical properties of the nanostructures. The tools used to study the polar nanostructures at the atomic scale will be mainly based on aberration corrected scanning transmission electron microscopy and related spectroscopies. From the structural data obtain we will create 3D atomic models that will allow us to understand the growth mechanisms as well as be used as input data for the further electronic/photonic properties simulations.
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