Thin Film Deposition

HV Evaporator

Plassys MEB 550S

The MEB 550S electron beam evaporator with fully automated control. For reduced pumping time the machine has a load lock and is capable of processing substrates up to 4″. The substrate holder can be adjusted in an angel to the source with an accuracy of 0.01°. It also can rotate around it’s own axis. For cleaning/etching substrates the evaporator has an ion gun with which an O2 or Ar/O2 plasma can be created. The accuracy of the deposition rate is determined by an oscillating crystal and is up to 0.01nm/s.

Available Metals: Al, Au, Pd, Pt, Ti, Cr, Co, V, Nb

User Support and  Scientific Advice:

Responsible: Lubuna Shafeek

Substitute: Juan Luis Aguilera

UHV Evaporator

Plassys MEB 550S2

The MEB 550 S2 is a UHV  type evaporator with three chambers. This computer controlled evaporation tool dedicated for fabrication of quantum devices. It has a high precision tilting/rotating sample holder for shadow evaporation, and   oxygen gas inlet for  oxidation of tunnel barriers. The source chamber is cryo pumped and separated  from the sample chamber by a gate valve. The sample chamber is turbo pumped, and is equipped with an ion gun for sample pre-cleaning and etching. 

Allowed metals: Al, Nb, Ti

  • Source chamber with a linear 4x 15 cc UHV ebeam source
  • Treatment chamber above the source chamber
  • Lateral Sample load lock for a 4″ substrate
  • Possibility for in-situ oxidation

User Support and  Scientific Advice:

Responsible: Lubuna Shafeek

Substitute: Juan Luis Aguilera

Atomic Layer Deposition (ALD)

Oxford FlexAL: ALD

The Oxford FlexAL systems provide a new range of flexibility and capability in the engineering of nanoscale structures and devices by offering remote plasma atomic layer deposition (ALD) processes and thermal ALD within a single system. This system deliver maximum flexibility in the choice of materials and precursors, low-temperature processes enabled by plasma ALD, and repeatable processes via recipe-driven software interface.

Currently installed precursors: for HfO2 and Al2O3 deposition.

  • Tetrakislethylmethylaminolhafnium(IV)
  • Trimethylaluminium  
  • Remote plasma & thermal ALD in one flexible tool
  • Automated 200mm load lock for process flexibility
  • Low-temperature processes enabled by plasma ALD
  • Low damage maintained by the use of remote plasma
  • Ability to handle from small wafer pieces up to full 200mm wafers
  • Integral glove box on precursor modules for in-situ change-over
  • Max deposition temperature 400ºC
  • ICP source 300W at 13.56 MHz
  • Electrode diameter 240 mm

User Support and Scientific Advice:

Responsible:  Juan Luis Aguilera  

Substitute:  Lubuna Shafeek

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